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Continuum Dislocation Dynamics (CDD) based on “All-Dislocation” Density (ADD):
A New Formalism of Dislocation-based Crystal Plasticity

by

Professor Alfonso H.W. Ngan

(Given on 20th March, 2024)
Abstract

One of the holy grails of computational material science is to satisfactorily predict metal plasticity from fundamental dislocation physics. Currently, discrete dislocation dynamics (DDD) is still limited to small quantities of dislocations irrelevant to most engineering applications, and slip-system based crystal plasticity (CP) lacks details of dislocation physics. Continuum dislocation dynamics (CDD) has received considerable interests for bridging the gap at the meso-scale. Recently, an exact evolution equation for an “all-dislocation” density (ADD) that represents continuum dislocation quantities over both space and dislocation-character domains has been developed by the present author. For coarse-grained simulations, ADD is superior to the Nye tensor or other representations of geometrically necessary dislocations (GND), since the statistically stored dislocation (SSD) contents which are important for dislocation dynamics will be preserved. In this talk, this new approach of CDD based on ADD will be presented.